digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mac4120 series silicon bidirectional thyristors available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak repetitive off-state voltage (1) (t j = -65 to +100c, gate open) mac4120-b MAC4120-D mac4120-m mac4120-n v drm 200 400 600 800 volts rms on-state current (conduction angle = 360, t c = 75c) i t(rms) 15 amps peak non-repetitive surge current (1 cycle, 60 hz) i tsm 100 amps circuit fusing considerations (t = 8.3ms) i 2 t 40 a 2 s peak gate power (pulse width = 1s) p gm 16 watts average gate power p g(av) 0.5 watts peak gate trigger current (pulse width = 1.0s) i gm 4 amps operating junction temperature range t j -65 to +100 c storage temperature range t stg -65 to +150 c stud torque 30 in. lb. note 1: ratings apply for open gate conditions. thyristor device s shall not be tested with a co nstant current source for blocki ng capability such that the voltage applied exceeds the rated blocking voltage. thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 1.1 c/w electrical characteristics (t c = 25c unless otherwise noted) characteristic symbol min typ. max unit peak blocking current (either direction) (v d = rated v drm @ t c = 25c) (v d = rated v drm @ t c = 100c) i drm - - - - 10 2 a ma peak on-state voltage (either direction) (i tm = 21a peak) v tm - 1.4 1.8 volts gate trigger current (continuous dc) (2) (main terminal voltage = 12v, r l = 30? ) mt2(+),g(+);mt2(-),g(-) mt2(+),g(-);mt2(-),g(+) mt2(+),g(+);mt2(-),g(-), t c = -65c mt2(+),g(-);mt2(-),g(+), t c = -65c i gt - - - - - - - - 50 80 150 200 ma gate trigger voltage (continuous dc) all quadrants (main terminal voltage = 12v, r l = 30? , t c = 25c ) (main terminal voltage = 12v, r l = 30? , t c = -65c ) (rated v drm , r l = 125? , t c = 100c) v gt - - 0.2 - - - 2.5 4.0 - volts holding current (either direction) (main terminal voltage= 12v, gate open, initiating current = 500ma, t c = 25c) (main terminal voltage= 12v, gate open, initiating current = 500ma, t c = -65c) i h - - - - 75 300 ma gate controlled turn-on time (v d = rated v drm , i tm = 25a peak, i gt = 160ma, rise time = 0.1s) t gt - 1.6 2.5 s rate of rise of commutation voltage (rated v drm , i t(rms) = 15a, commutating di/dt = 8a/ms, gate unenergized, t c = 75c) dv/dt(c) 2 10 - v/s sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130212
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mac4120 series silicon bidirectional thyristors characteristic symbol min typ. max unit critical rate of rise of off-state voltage (v d = rated v drm , exponential voltage rise, gate open, t c = 100c) mac4120-b MAC4120-D mac4120-m mac4120-n dv/dt 30 20 10 10 150 100 75 - - - - - v/s mechanical characteristic case to-48 iso marking body painted, alpha-numeric polarity cathode is stud to-48 iso inches millimeters min max min max a 0.551 0.559 14.000 14.200 b 0.501 0.505 12.730 12.830 c - 1.280 - 32.510 f - 0.160 - 4.060 h - 0.265 - 6.730 j 0.420 0.455 10.670 11.560 k 0.300 0.350 7.620 8.890 l 0.255 0.275 6.480 6.990 q 0.055 0.085 1.400 2.160 t 0.135 0.150 3.430 3.810 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130212
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